Advantages of Silicon Carbide Susceptor
- Strong chemical resistance protects against acid, alkali, and organic corrosion.
- Ultra-high-purity SiC coating minimizes contamination during semiconductor processing.
- Fine, dense surface structure supports smooth gas flow and clean film growth.
- Guarantees even thermal distribution for consistent wafer heating.
CVD Silicon Carbide Susceptors for Epitaxy RTA PVD CMP LED
Manufactured from high-purity CVD SiC-coated graphite, our susceptors offer excellent thermal stability, oxidation resistance, and uniform heat distribution. Capable of withstanding temperatures of 1650°C and extreme chemical environments, they offer process consistency and no contamination. Produced for epitaxy, RTA, PVD, CMP, LED, and photovoltaic applications, these SiC susceptors offer clean and stable performance for high-demanding semiconductor processes.
High-Performance Silicon Carbide Susceptors for Semiconductor Processes
Our range of SiC-coated trays and susceptors is designed for MOCVD, CVD, and high-temperature wafer processing, ensuring precision, purity, and durability.
Tailored for MOCVD reactors, it prevents particle peeling and supports uniform film deposition in LED and GaN processes.
Provides secure and stable support for wafers during high-temperature processes like RTA, PVD, and CVD.
Made by chemical vapor deposition, this susceptor delivers ultra-clean surfaces and consistent performance for semiconductor heating systems.
Designed for high-temperature semiconductor environments.
Application Areas of Silicon Carbide Susceptors
High-purity SiC-coated graphite trays and susceptors provide stable support in major semiconductor and optoelectronic applications.
Epitaxial GrowthUsed in epitaxy reactors, SiC-coated susceptors provide uniform thermal distribution and clean surfaces for consistent film thickness and resistivity.
MOCVD ProcessIn MOCVD systems, our SiC trays prevent particle peeling and ensure stable performance for GaN and LED wafer production.
RTA and Thermal ProcessingIdeal for RTA and high-temperature tools, these susceptors withstand up to 1650°C while protecting wafers from contamination and distortion.
Semiconductor FabricationEngineered for use in CVD, PVD, ICP, and CMP tools, SiC susceptors offer high-purity support and chemical resistance throughout the semiconductor production process.
LED and Optoelectronics ManufacturingProvides thermally stable and particle-free support for LED chips during multiple heating and cleaning cycles.
Photovoltaic Wafer ProcessingUsed in solar cell production, SiC trays ensure wafer stability in oxidizing atmospheres and aggressive thermal cycling.
Why Choose Newthink Silicon Carbide Susceptor?
Choosing Newthink means choosing stable quality, for we deliver exactly what you need.
To meet your large order demands and ensure steady delivery times.
Our components meet extreme dimensional requirements—flatness up to 0.0005 mm—to solve customers’ challenges with thermal uniformity and assembly fit.
We provide design-to-delivery support for intricate wafer tray shapes, helping R&D and engineering teams meet unique equipment specifications.
Small-volume orders ship in as fast as 15 days, addressing urgent needs and reducing project downtime.
ISO9001-certified production and shipments to 40+ countries ensure trusted performance and batch consistency for high-end industries.
Silicon Carbide Susceptor Production Workshop
Newthink has 14 years of experience in advanced ceramic production. Our factory is equipped with advanced CVD coating systems, high-precision CNC machines, and automated inspection tools to ensure consistent quality in silicon carbide susceptor production. With large-scale capacity, strict ISO management, and customized protective packaging, we deliver stable and contamination-free products worldwide.
Versatile Silicon Carbide Susceptor Types for Epitaxy Reactors
Newthink offers barrel, pancake, and single-wafer SiC susceptors designed to fit a wide range of epitaxy reactors, including Applied, LPE, CSD, Gemini, and ASM systems. All substrates are made from high-strength isostatic graphite and tailored for demanding processes like epitaxy, crystal growth, ion implantation, and LED chip manufacturing.
Related Products
SiC ChuckProvides high thermal conductivity and chemical stability for precise wafer positioning during high-temperature semiconductor processes.
Cantilever PaddleOffers stable wafer support and low thermal mass, ensuring fast response in RTP and diffusion furnaces.
SiC ShowerheadEnsures uniform gas distribution and corrosion resistance in CVD and MOCVD chambers for consistent film deposition.
Wafer Ceramic FingerDelivers excellent strength and purity for safe wafer transfer and handling in vacuum and thermal environments.
SiC Wafer BoatDesigned for batch wafer processing with high-temperature and oxidation resistance in LPCVD and diffusion applications.
SiC-Coated Graphite: Graphite core with a coating of silicon carbide is quite possibly the most general susceptor design. The SiC coating provides an extremely clean, hard, and chemically inert surface that renders the susceptor extremely resistant to wear and service life. They are used in high-temperature processes (like epitaxy) because the graphite substrate offers good heat conductivity, but the SiC layer prevents erosion and contamination.
Pure Graphite (Carbon): Some susceptors are made of pure graphite alone. Graphite has very high melting points and very good thermal homogeneity. It can oxidize or lose particles in reactive atmospheres, however, and so will tend to require a protective coating. Graphite susceptors without a coating are usually reserved for inert atmospheres or where slight contamination is not an issue. Manufacturers use special high-purity, fine-grain graphite grades on susceptors to maintain impurities to a minimum.
Quartz (Fused Silica): Quartz susceptors or wafer boats are utilized in ultra-clean processes, such as diffusion furnaces and oxidation/annealing steps. Fused silica is extremely pure (99.99%+ SiO₂) and supports about 1000–1200 °C. Quartz is chemically inert to oxidizing gases and dopants (phosphorus oxychloride) as well, so it won’t contaminate the wafers. The compromise is that quartz has lower thermal conductivity and devitrifies (gets cloudy/brittle) after long periods of use at high temperature.
Metal (for instance, Molybdenum): Metal susceptors (most often molybdenum or sometimes tungsten) are used in certain reactors and RTPs. Molybdenum has excellent thermal conductivity and can be machined to precision, and hence it can be used in single-wafer MOCVD reactors and a few RTP systems. Metals can withstand extremely high temperatures, but they must be used under non-oxidizing conditions so as to avoid corrosion (for instance, molybdenum oxidizes at high temperature in the presence of air). Metal susceptors are typically chosen when induction heating is used since they are well-suited to RF energy. They are less universal than graphite or quartz but are important in some applications.
Silicon carbide (SiC) coatings on graphite susceptors dramatically increase their performance and lifetime. The SiC-coated susceptor is the ultimate of both worlds: the enhanced thermal qualities of graphite combined with a hard, inert SiC surface. The coating also protects as a shield – without it, hot graphite in a reactive gas environment would oxidize or spray particles, but SiC seals off the surface and prevents that degradation. This means much reduced contamination and much increased lifetime for the susceptor. SiC is also extremely hard and chemically resistant to corrosive chemicals, and hence coated susceptors are resistant to process gas wear (e.g., chlorine or ammonia) that would corrode bare graphite. In general, SiC-coated graphite susceptors offer high purity, chemical resistance, thermal stability, and improved durability in semiconductor processes. These benefits render the SiC coating nearly ubiquitous on susceptors in epitaxy and other highly demanding CVD applications.
The lifespan of a susceptor depends on materials and process conditions, but all are consumables over time. In clean, mild environments, they can last hundreds of cycles. In harsh settings like GaN MOCVD, wear or deposits may require earlier replacement. SiC-coated graphite susceptors last longer than uncoated ones due to better corrosion and wear resistance. Quartz susceptors are also durable but must be replaced if devitrification or cracks appear. Regular maintenance, like cleaning and avoiding thermal shock, helps extend service life.
Pricing for wafer susceptors from Newthink varies depending on size, material (such as quartz, graphite, or SiC-coated), design complexity, and precision requirements. Costs typically range from a few hundred to several thousand US dollars per piece. Since susceptors are high-precision components, Newthink provides customized quotes based on customer specifications and current material prices rather than fixed pricing. A minimum order quantity (MOQ) is usually required, particularly for custom designs or international shipments—this may involve ordering a set number of units or meeting a minimum order value. For single-piece orders used in R&D or as replacements, higher unit costs should be expected. Bulk orders can lower the price per unit, and maintaining spare inventory is recommended due to production lead times.
