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Silicon Carbide Susceptor

Silicon Carbide Susceptor

Ultra-pure SiC coating offers uniform heat, high temperature stability, and zero contamination for high precision semiconductor processes.

  • Silicon Carbide Susceptor tray
  • Silicon Carbide Susceptor
  • Silicon Carbide Susceptor
  • Ultra pure SiC coating
  • CVD Silicon Carbide Susceptors
  • Silicon Carbide Susceptor tray
  • Silicon Carbide Susceptor
  • Silicon Carbide Susceptor
  • Ultra pure SiC coating
  • CVD Silicon Carbide Susceptors

Advantages of Silicon Carbide Susceptor

  • Strong chemical resistance protects against acid, alkali, and organic corrosion
  • Ultra-high-purity SiC coating minimizes contamination during semiconductor processing
  • Fine, dense surface structure supports smooth gas flow and clean film growth
  • Guarantees even thermal distribution for consistent wafer heating

CVD Silicon Carbide Susceptors for Epitaxy RTA PVD CMP LED

Manufactured from high-purity CVD SiC-coated graphite, Newthink susceptors offer excellent thermal stability, oxidation resistance, and uniform heat distribution. Withstanding temperatures of 1650℃ and extreme chemical environments, SiC ceramic susceptors offer process consistency and no contamination. Produced for epitaxy, RTA, PVD, CMP, LED, and photovoltaic applications, these SiC susceptors offer clean and stable performance for high-demanding semiconductor processes.

CVD Silicon Carbide Susceptors for Epitaxy RTA PVD CMP LED

High-Performance Silicon Carbide Susceptors for Semiconductor Processes

Newthink range of SiC-coated trays and susceptors is designed for MOCVD, CVD, and high-temperature wafer processing, ensuring precision, purity, and durability.

MOCVD Tray Susceptor
MOCVD Tray Susceptor

Tailored for MOCVD reactors. Prevent particle peeling, support uniform film deposition in LED and GaN processes.

SiC-Coated wafer carrier tray
SiC-Coated Wafer Carrier Tray

Secure support for wafers in high-temperature processes like RTA, PVD, and CVD.

CVD SiC Susceptor
CVD SiC Susceptor

Made by chemical vapor deposition. Deliver ultra-clean surfaces, consistent for semiconductor heating.

CVD SiC-Coated Graphite Wafer Tray
CVD SiC-Coated Graphite Wafer Tray

Designed for high-temperature semiconductor environments. Durable, corrosion resistance.

Application Areas of Silicon Carbide Susceptors

High-purity SiC-coated graphite trays and susceptors provide stable support in major semiconductor and optoelectronic applications.

  • Epitaxial Growth
    Epitaxial Growth

    Used in epitaxy reactors, SiC-coated susceptors provide uniform thermal distribution and clean surfaces for consistent film thickness and resistivity.

  • MOCVD Process
    MOCVD Process

    In MOCVD systems, our SiC trays prevent particle peeling and ensure stable performance for GaN and LED wafer production.

  • RTA and Thermal Processing
    RTA and Thermal Processing

    Ideal for RTA, withstand up to 1650℃, protecting wafers from contamination and distortion.

  • Semiconductor Fabrication
    Semiconductor Fabrication

    Engineered for use in CVD, PVD, ICP, and CMP tools, SiC susceptors offer stable support and chemical resistance in semiconductor production process.

  • LED and Optoelectronics Manufacturing
    LED and Optoelectronics Manufacturing

    Provides thermally stable and particle-free support for LED chips during multiple heating and cleaning cycles.

  • Photovoltaic Wafer Processing
    Photovoltaic Wafer Processing

    Used in solar cell production, SiC trays ensure wafer stability in oxidizing atmospheres and thermal cycling.

Why Choose Newthink Silicon Carbide Susceptor?

Choosing Newthink means choosing stable quality, for we deliver exactly what you need.

Strong Mass Production
Strong mass production capacity

To meet your large order demands and ensure steady delivery times.

Precision manufacturing for tight tolerances

Our SiC components meet extreme dimensional requirements—flatness up to 0.0005 mm—to solve customers’ challenges with thermal uniformity and assembly fit.

Certified quality with global reliability

ISO9001-certified production and shipments to 40+ countries ensure trusted performance and batch consistency for high-end industries.

Stable supply with rapid turnaround

Small-volume orders ship in as fast as 15 days, addressing urgent needs and reducing project downtime.

Silicon Carbide Susceptor Production Workshop

Newthink has 14 years of experience in advanced ceramic production. Our factory is equipped with advanced CVD coating systems, high-precision CNC machines, and automated inspection tools to ensure consistent quality in silicon carbide susceptor production. With large-scale capacity, strict ISO management, and customized protective packaging, Newthink deliver stable and contamination-free products worldwide.

Silicon Carbide Susceptor Production Workshop
Versatile Silicon Carbide Susceptor Types for Epitaxy Reactors

Versatile Silicon Carbide Susceptor Types for Epitaxy Reactors

Newthink offers barrel, pancake, and single-wafer SiC susceptors designed to fit a wide range of epitaxy reactors, including Applied, LPE, CSD, Gemini, and ASM systems. All substrates are made from high-strength isostatic graphite and tailored for demanding processes like epitaxy, crystal growth, ion implantation, and LED chip manufacturing.

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  • SiC Showerhead
    SiC Showerhead

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  • Wafer Ceramic Finger
    Wafer Ceramic Finger

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Why are many wafer susceptors SiC-coated?

The SiC-coated susceptor is the ultimate of both worlds: the enhanced thermal qualities of graphite combined with a hard, inert SiC surface. The coating also protects as a shield. Without it, hot graphite in a reactive gas environment would oxidize or spray particles, but SiC seals off the surface and prevents that degradation. SiC is also extremely hard and chemically resistant to corrosive chemicals, and hence coated susceptors are resistant to process gas wear (e.g., chlorine or ammonia) that would corrode bare graphite.

What materials are silicon carbide susceptors made of?

SiC-Coated Graphite: Graphite core with a coating of silicon carbide is quite possibly the most general susceptor design. The SiC coating provides an extremely clean, hard, and chemically inert surface that renders the susceptor extremely resistant to wear and service life.
Pure Graphite (Carbon): Some susceptors are made of pure graphite alone. Graphite has very high melting points and very good thermal homogeneity. It can oxidize or lose particles in reactive atmospheres, however, and so will tend to require a protective coating.
Quartz (Fused Silica): Quartz susceptors or wafer boats are utilized in ultra-clean processes, such as diffusion furnaces and oxidation/annealing steps. Fused silica is extremely pure (99.99%+ SiO₂)​ and supports about 1000–1200 ℃.
Metal (for instance, Molybdenum): Metal susceptors are used in certain reactors and RTPs. Molybdenum has excellent thermal conductivity and can be machined to precision, and hence it can be used in single-wafer MOCVD reactors and a few RTP systems. Metals can withstand extremely high temperatures, but they must be used under non-oxidizing conditions so as to avoid corrosion.

What is the typical lifespan of a silicon carbide susceptor?

The lifespan of a susceptor depends on materials and process conditions, but all are consumables over time. In clean, mild environments, they can last hundreds of cycles. In harsh settings like GaN MOCVD, wear or deposits may require earlier replacement. SiC-coated graphite susceptors last longer than uncoated ones due to better corrosion and wear resistance. Quartz susceptors are also durable but must be replaced if devitrification or cracks appear. Regular maintenance, like cleaning and avoiding thermal shock, helps extend service life.

How much do silicon carbide susceptors cost? Is there a minimum order quantity?

Pricing for wafer susceptors from Newthink varies depending on size, material (such as quartz, graphite, or SiC-coated), design complexity, and precision requirements. Since susceptors are high-precision components, Newthink provides customized quotes based on customer specifications and current material prices.
For single-piece orders used in R&D or as replacements, higher unit costs should be expected. Bulk orders can lower the price per unit.

How do SiC susceptors compare to quartz or graphite ones?

SiC susceptors offer superior high-temperature strength, thermal conductivity and longevity compared to both quartz and graphite. SiC maintains its strength at temperatures up to 1600℃. Quartz softens above 1100℃ and leads to instability. SiC susceptor also has a higher thermal conductivity, bringing faster and uniform heating. Moreover, for its thermal shock resistance and wear resistance, SiC lasts significantly longer than quartz.

Can the SiC susceptors withstand thermal cycling without degradation?

Yes. SiC ceramics have remarkable thermal cycling resistance, withstanding rapid temperature changes without cracking based on its high thermal conductivity. SiC ceramic susceptor retains strength at high temperatures. It is able to maintain its structural stiffness even after repeated thermal cycling. Its ability to sustain extreme temperatures and temperature flux without rapid deterioration is ideal for thermal applications with high reliability.

What are the factors affecting the lifetime of a silicon carbide susceptor?

The lifespan of a silicon carbide susceptor depends on temperature, mechanical stress and operation quality.
When used close to or above its design temperature, oxidation speed increases, increasing the resistance and contributing to aging. The environment contributes to the processes, as oxidizing gases create an oxidizing effect on the surface. Other considerations include poor installation and excessive surface loads that generate thermal and mechanical stresses which can produce cracking and reduced life.

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